Single molecule chemically amplified resists based on ionic and non-ionic PAGs

Richard A. Lawson; Cheng-Tsung Lee; Wang Yueh; Laren Tolbert; Clifford L. Henderson

doi:10.1117/12.773570

27 March 2008 Single molecule chemically amplified resists based on ionic and non-ionic PAGs

Richard A. Lawson, Cheng-Tsung Lee, Wang Yueh, Laren Tolbert, Clifford L. Henderson

Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 69230K (2008) https://doi.org/10.1117/12.773570
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

An ionic and non-ionic single molecule chemically amplified resist have been synthesized, characterized, and imaged under high resolution e-beam. The ionic single molecule resist is based on a tBoc protected triarylsulfonium (TAS) core that generates a free superacid upon exposure. TAS demonstrates a low LER (3&sgr;) of 3.9 nm under 100 keV e-beam exposures with a resolution of 55 nm. Under EUV exposures, it exhibits a LER of 5.2 nm with a sensitivity of 60 mJ/cm2 and 50 nm half-pitch resolution. The non-ionic single molecule resist is based on a sulfonic acid containing molecular glass core that uses a norbornene dicarboximide PAG. It images with a low LER of 3.9 nm and a resolution of 40 nm. The non-ionic resist shows multiple improvements over the ionic system including improved resolution, reduced dark loss, and improved solubility. Both resists successfully demonstrate the feasibility of using a single component molecular resist system with high PAG loading. They also show that single molecule resists provide improved LER compared to conventional PAG blended systems, even for unoptimized systems.

Citation Download Citation

Richard A. Lawson, Cheng-Tsung Lee, Wang Yueh, Laren Tolbert, and Clifford L. Henderson "Single molecule chemically amplified resists based on ionic and non-ionic PAGs", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69230K (27 March 2008); https://doi.org/10.1117/12.773570

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