Paper
23 July 2008 Production of extreme ultraviolet (EUV) quality silicon carbide (SiC) aspheric optics
Author Affiliations +
Abstract
L-3 Communications, SSG-Tinsley reports the optical performance demonstrated with an EUV quality aspheric mirror. The off axis ellipsoidal reflector demonstrates a surface figure of < 3 nm RMS and a surface finish which ranges from 3 - 7 Angstroms RMS depending on the spatial period of interest. Interferometric data is provided along with surface roughness results obtained with phase measuring microscopy. The capability to produce high quality SiC aspheric optics, combined with the inherent thermal stability associated with SiC, enables a number of advanced mission concepts, including next generation solar observing.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jay Schwartz, Andrea Arneson, and Joseph Robichaud "Production of extreme ultraviolet (EUV) quality silicon carbide (SiC) aspheric optics", Proc. SPIE 7018, Advanced Optical and Mechanical Technologies in Telescopes and Instrumentation, 70180U (23 July 2008); https://doi.org/10.1117/12.789731
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Cited by 5 scholarly publications.
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KEYWORDS
Mirrors

Silicon carbide

Error analysis

Extreme ultraviolet

Aspheric optics

Silicon

Spatial frequencies

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