Results of new CD detection capability on advanced reticles

Arosha Goonesekera; Heiko Schmalfuss; Isaac Lee; Chun Guan; Aditya Dayal; Thomas Schulmeyer; Jan Heumann

doi:10.1117/12.793091

19 May 2008 Results of new CD detection capability on advanced reticles

Arosha Goonesekera, Heiko Schmalfuss, Isaac Lee, Chun Guan, Aditya Dayal, Thomas Schulmeyer, Jan Heumann

Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70282L (2008) https://doi.org/10.1117/12.793091
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan

Abstract

Semiconductor device manufacturers have made technological advances in fabricating devices at 65nm and 45nm nodes. Technology is advancing towards 32nm node devices. Reticles at these device nodes are designed with tight critical dimension (CD) specifications and sub-resolution features. Inspection tools capable of detecting CD defects on the order of 20 nm are required to accommodate these device nodes. To meet this challenge, KLA-Tencor has developed a new "CD Detector" capability on the TeraScanHR reticle inspection tool that efficiently detects two-sided CD defects on reticles at the 45nm node and beyond. The CD Detector is available in both Die-to-Die (DD) and Die-to-Database (DB) inspection modes. This paper presents results of a CD Detector Beta evaluation on variety of advanced reticles in a production setting at Advanced Mask Technology Center (AMTC) in Germany. Inspection results will demonstrate improved sensitivity to two-sided CD defects and good inspectability, at inspection times similar to a standard HiRes inspection. Discussion will focus on enabling the highest sensitivity to CD defects at 72nm pixel inspections, which is suitable for advanced research and development studies, as well as improved sensitivity at 90nm pixel inspections for higher productivity.

Citation Download Citation

Arosha Goonesekera, Heiko Schmalfuss, Isaac Lee, Chun Guan, Aditya Dayal, Thomas Schulmeyer, and Jan Heumann "Results of new CD detection capability on advanced reticles", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70282L (19 May 2008); https://doi.org/10.1117/12.793091

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