Paper
3 September 2008 Radiation effects on laser diodes: a literary review
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Abstract
The laser diode was first developed in 1962, since which its design and some of the initial concepts have changed vastly. Improvements in laser diode technology have assisted in the development of many modern day technologies, ranging from remote sensing instruments to highly efficient pumping of other laser systems. As technologies where laser diodes can be applied advance, it is important to understand the behaviour of the laser diode in such environments which may become more hostile or complex. This paper presents information and data from literatures published on previous investigations carried out on laser diodes under the influence of neutron, gamma or X-ray irradiation. Any behavioural trends will be observed, as will any abnormalities to provide a succinct review of the laser diodes in these environments, and allow for predictions or further investigations into this subject to be made.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sarah L. Waterhouse and Keren K. Jobbins "Radiation effects on laser diodes: a literary review", Proc. SPIE 7070, Optical Technologies for Arming, Safing, Fuzing, and Firing IV, 70700E (3 September 2008); https://doi.org/10.1117/12.796279
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconductor lasers

Radiation effects

Laser damage threshold

Annealing

Gamma radiation

X-rays

Diodes

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