Paper
13 October 2008 Study of x-ray lithography mask distortion during electron-beam writing
Hongyan Shang, Yongkun Wang
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Abstract
Three-dimensional finite element model was developed to simulate the X-ray lithography mask distortion during electron-beam writing (EBW). Equivalent heat flux density method was proposed and the transient thermal stress simulation was done. The results show that the in-plane distortion (IPD) of the mask fluctuates with the time. The maximum value is 8.24 nm, and the direction is deviated from the electron beam center. The maximum out-of-plane distortion (OPD) is 9.75μm. The direction is normal to the pattern window, and occurred in the center of the beam center.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongyan Shang and Yongkun Wang "Study of x-ray lithography mask distortion during electron-beam writing", Proc. SPIE 7129, Seventh International Symposium on Instrumentation and Control Technology: Optoelectronic Technology and Instruments, Control Theory and Automation, and Space Exploration, 712909 (13 October 2008); https://doi.org/10.1117/12.807384
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KEYWORDS
Distortion

Photomasks

Electron beams

X-ray lithography

Finite element methods

X-rays

Semiconducting wafers

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