Advanced technology for after-develop inspection

Z. Y. Chen; I. C. Chou; J. H. Yang; Wallas Chen; Josh Chang; Henry Chen; Melvin Ng; Meng-Che Wu; Cathy Perry-Sullivan; Mingwei Li

doi:10.1117/12.804661

1 December 2008 Advanced technology for after-develop inspection

Z. Y. Chen, I. C. Chou, J. H. Yang, Wallas Chen, Josh Chang, Henry Chen, Melvin Ng, Meng-Che Wu, Cathy Perry-Sullivan, Mingwei Li

Author Affiliations +

Proceedings Volume 7140, Lithography Asia 2008; 71400Y (2008) https://doi.org/10.1117/12.804661
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan

Abstract

This paper describes a methodology for after-develop inspection (ADI) using a broadband DUV/UV/visible brightfield inspector with a unique optical mode. The VIB (Varied Illumination Brightfield) optical mode enables capture of unique killer defects at low nuisance rate on certain 45nm and 32nm ADI layers, significantly improving litho inspection sensitivity. By implementing this inspection, defect engineers were able to detect critical excursions at ADI rather than at later process steps. This shortened process development time and allowed for re-work, significantly reducing wafer cost.

Citation Download Citation

Z. Y. Chen, I. C. Chou, J. H. Yang, Wallas Chen, Josh Chang, Henry Chen, Melvin Ng, Meng-Che Wu, Cathy Perry-Sullivan, and Mingwei Li "Advanced technology for after-develop inspection", Proc. SPIE 7140, Lithography Asia 2008, 71400Y (1 December 2008); https://doi.org/10.1117/12.804661

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