Paper
24 February 2009 Optical characterization of the heat-affected zone in laser patterning of thin film a-Si:H
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Abstract
In this paper we present an original approach to estimate the heat affected zone in laser scribing processes for photovoltaic applications. We used high resolution IR-VIS Fourier transform spectrometry at micro-scale level for measuring the refractive index variations at different distances from the scribed line, and discussing then the results obtained for a-Si:H layers irradiated in different conditions that reproduce standard interconnection parameters. In order to properly assess the induced damage by the laser process, these results are compared with measurements of the crystalline state of the material using micro-Raman techniques. Additionally, the authors give details about how this technique could be used to feedback the laser process parametrization in monolithic interconnection of thin film photovoltaic devices based on a-Si:H.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carlos L. Molpeceres, Monica Colina, Miguel Holgado, Miguel Morales, Isabel Sanchez-Aniorte, Sara Lauzurica, Juan J. Garcia-Ballesteros, and José L. Ocaña "Optical characterization of the heat-affected zone in laser patterning of thin film a-Si:H", Proc. SPIE 7202, Laser-based Micro- and Nanopackaging and Assembly III, 72020R (24 February 2009); https://doi.org/10.1117/12.809514
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Refractive index

Crystals

Laser processing

Raman spectroscopy

Optical lithography

Thin films

Laser ablation

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