Free carrier lifetime modification in silicon

N. M. Wright; D. J. Thomson; K. L. Litvinenko; W. R. Headley; A. J. Smith; A. P. Knights; J. H. B. Deane; F. Y. Gardes; G. Z. Mashanovich; R. Gwilliam; G. T. Reed

doi:10.1117/12.810907

17 February 2009 Free carrier lifetime modification in silicon

N. M. Wright, D. J. Thomson, K. L. Litvinenko, W. R. Headley, A. J. Smith, A. P. Knights, J. H. B. Deane, F. Y. Gardes, G. Z. Mashanovich, R. Gwilliam, G. T. Reed

Author Affiliations +

Proceedings Volume 7220, Silicon Photonics IV; 722006 (2009) https://doi.org/10.1117/12.810907
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

We investigate the effects of silicon ion irradiation on free carrier lifetime and propagation loss in silicon rib waveguides, and thus its ability to reduce the density of two-photon-absorption (TPA) generated free carriers, an undesired effect of the Raman process in crystalline silicon. Our experimental results show that free carrier lifetime can be reduced significantly by silicon ion implantation. Associated excess optical absorption from the implanted silicon ions can be kept low if irradiation energy and dose are correctly chosen. Simulations of Raman amplification in silicon rib waveguides suggest that net gain can be achieved in certain cases without the need for an integrated diode in reverse bias to sweep out the photo-generated free carriers.

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N. M. Wright, D. J. Thomson, K. L. Litvinenko, W. R. Headley, A. J. Smith, A. P. Knights, J. H. B. Deane, F. Y. Gardes, G. Z. Mashanovich, R. Gwilliam, and G. T. Reed "Free carrier lifetime modification in silicon", Proc. SPIE 7220, Silicon Photonics IV, 722006 (17 February 2009); https://doi.org/10.1117/12.810907

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