Silicon germanium oxide (SixGe1-xOy) infrared material for uncooled infrared detection

Qi Cheng; M. Almasri

doi:10.1117/12.818866

6 May 2009 Silicon germanium oxide (Si_xGe_1-xO_y) infrared material for uncooled infrared detection

Qi Cheng, M. Almasri

Proceedings Volume 7298, Infrared Technology and Applications XXXV; 72980K (2009) https://doi.org/10.1117/12.818866
Event: SPIE Defense, Security, and Sensing, 2009, Orlando, Florida, United States

Abstract

Thin film Si_xGe_1-xO_y infrared sensitive material was grown by RF magnetron sputtering, by depositing Si and Ge thin film simultaneously from two deposition targets in an oxygen (O) and argon environment at room temperature and at 400°C. Film composition was varied by adjusting RF power applied to the silicon target and by varying the oxygen flow of the gas mixture in the deposition chamber. The atomic compositions of Si, Ge, and O in the deposited thin film were determined and analyzed using energy dispersive X-ray spectroscopy (EDS). The influence of changing Ge and Si and O compositions on temperature coefficient of resistance (TCR), and resistivity were studied. Different fabrication scenarios have been used to vary the Ge, Si and O concentrations. The highest achieved TCRs and the corresponding resistivities at room temperature were -4.86 %/K and -6.43 %/K, and 2.45×10² Ω cm and 3.34×10² Ω cm using Si_0.195Ge_0.706O_0.099and Si_0.127Ge_0.835O_0.038for films deposited at room temperature and at 400 ^oC, respectively.

Citation Download Citation

Qi Cheng and M. Almasri "Silicon germanium oxide (Si_xGe_1-xO_y) infrared material for uncooled infrared detection", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72980K (6 May 2009); https://doi.org/10.1117/12.818866

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