Microwave irradiation of lead zirconate titanate thin films

Z. J. Wang; M. W. Zhu

doi:10.1117/12.839949

20 October 2009 Microwave irradiation of lead zirconate titanate thin films

Z. J. Wang, M. W. Zhu

Proceedings Volume 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering; 74930A (2009) https://doi.org/10.1117/12.839949
Event: Second International Conference on Smart Materials and Nanotechnology in Engineering, 2009, Weihai, China

Abstract

The effect of microwave irradiation process on crystallization of Pb(Zr_xTi_1-x)O₃ (PZT) films was investigated. The PZT thin films were coated on Pt/Ti/SiO₂/Si substrates by a sol-gel method and then crystallized by single-mode 2.45 GHz microwave irradiation in the magnetic field at 500°C for 30 min and 650°C for 60 s, respectively. The crystalline phases, microstructures and electrical properties of the PZT films are investigated. X-ray diffraction analysis indicated that both the films heated by microwave irradiation at 500°C for 30 min and those at 650°C for 60 s were crystallized well into the perovskite phase. However, the PZT films crystallized at 500°C for 30 min had a (100)-preferred orientation while the PZT films crystallized at 650°C for 60 s had a (111)-preferred orientation. The average values of remanent polarization, coercive field, dielectric constant and loss of the PZT films crystallized at 500°C for 30 min are approximately 21 μC/cm², 90 kV/cm, 510 and 0.07 respectively, whereas the PZT films crystallized at 650°C for 60 s are approximately 27 μC/cm², 82 kV/cm, 900 and 0.05 respectively. The difference between the electrical properties of the PZT films crystallized by deferent process can be related to the microstructure effect.

Citation Download Citation

Z. J. Wang and M. W. Zhu "Microwave irradiation of lead zirconate titanate thin films", Proc. SPIE 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering, 74930A (20 October 2009); https://doi.org/10.1117/12.839949

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