Paper
17 February 2010 A 7-W 1178nm GaInNAs based disk laser for guide star applications
T. Leinonen, V.-M. Korpijärvi, J. Puustinen, A. Härkönen, M. Guina, M. Pessa
Author Affiliations +
Abstract
We report a GaInNAs/GaAs-based disk laser producing 7 W output power at 1180 nm wavelength at a temperature of 15 °C. The laser generated more than 5 W of output power when it was forced to operate with a narrow spectrum at 1178 nm. The gain mirror was grown using a molecular beam epitaxy reactor and it comprised 10 GaInNAs QWs and a 25.5- pair GaAs/AlAs distributed Bragg reflector.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Leinonen, V.-M. Korpijärvi, J. Puustinen, A. Härkönen, M. Guina, and M. Pessa "A 7-W 1178nm GaInNAs based disk laser for guide star applications", Proc. SPIE 7578, Solid State Lasers XIX: Technology and Devices, 757811 (17 February 2010); https://doi.org/10.1117/12.841365
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Quantum wells

Mirrors

Disk lasers

Diamond

Semiconductor lasers

Luminescence

Nitrogen

RELATED CONTENT

Monolithic GaInNAsSb/GaAs VECSEL emitting at 1550 nm
Proceedings of SPIE (March 04 2015)
1220 nm mode-locked GaInNAs disk laser
Proceedings of SPIE (February 28 2009)
3.5 W GaInNAs disk laser operating at 1220 nm
Proceedings of SPIE (May 08 2008)
1 W red light generation by intracavity doubling in a...
Proceedings of SPIE (February 14 2008)
1043nm semiconductor disk laser
Proceedings of SPIE (February 17 2010)

Back to Top