Paper
25 February 2010 Applying the joint Wigner time-frequency distribution to characterization of ultra-short optical dissipative solitary pulses in the actively mode-locked semiconductor laser with an external single-mode fiber cavity
Alexandre S. Shcherbakov, P. Moreno Zarate, Joaquin Campos Acosta, Yurij V. Il'n, Il'ya S. Tarasov
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Abstract
We discuss specifically elaborated technique for characterizing the train-average parameters of low-power picosecond optical pulses with the frequency chirp, arranged in high-repetition-frequency trains, in both time and frequency domains. This technique is applied to rather important case of pulse generation when a single-mode semiconductor heterolaser operates in a multi-pulse regime of the active mode-locking. In fact, the trains of optical dissipative solitary pulses, which appear under a double balance between mutually compensating actions of dispersion and nonlinearity as well as gain and optical losses, are under characterization. The presented approach involves the joint Wigner time-frequency distributions, which can be found for those picosecond optical dissipative solitary pulses due to the exploitation of a novel interferometric technique. Practically, the semiconductor InGaAsP/InP-heterolaser generating at the wavelength 1320 nm was exploited during the illustrating experiments carried out and the possibility of evaluating the corresponding joint Wigner time-frequency distributions has been obviously demonstrated.
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Alexandre S. Shcherbakov, P. Moreno Zarate, Joaquin Campos Acosta, Yurij V. Il'n, and Il'ya S. Tarasov "Applying the joint Wigner time-frequency distribution to characterization of ultra-short optical dissipative solitary pulses in the actively mode-locked semiconductor laser with an external single-mode fiber cavity", Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 75971B (25 February 2010); https://doi.org/10.1117/12.839445
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KEYWORDS
Time-frequency analysis

Picosecond phenomena

Mode locking

Semiconductors

Active optics

Modulation

Semiconductor lasers

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