GaN-based VCSELs: analysis of internal device physics and performance limitations

Joachim Piprek; Simon Li

doi:10.1117/12.840515

10 March 2010 GaN-based VCSELs: analysis of internal device physics and performance limitations

Joachim Piprek, Simon Li

Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 760217 (2010) https://doi.org/10.1117/12.840515
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

GaN-based vertical-cavity surface-emitting lasers (VCSELs) are expected to exhibit several advantages over their already widely used edge-emitting counterparts, including lower manufacturing costs, circular output beams, and longer lifetime. However, in contrast to the great success of GaN-based edge-emitting lasers in recent years, GaN-VCSELs still face significant challenges. Electrically pumped devices have been demonstrated only recently and they exhibit severe performance restrictions. We here analyze these recently manufactured GaN-VCSELs using advanced laser simulation software. The simulation self-consistently combines carrier transport, photon emission, and multi-mode optical wave guiding. For the quantum wells, Schrödinger and Poisson equations are solved iteratively at every bias point to account for the Quantum-Confined Stark Effect. Our analysis shows that thick quantum wells allow for the almost complete elimination of the built-in quantum well polarization field. The simulations also reveal several performance limiting effects, e.g., gain-peak offset, current crowding, and electron leakage. Design optimization options are discussed and simulated.

Citation Download Citation

Joachim Piprek and Simon Li "GaN-based VCSELs: analysis of internal device physics and performance limitations", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760217 (10 March 2010); https://doi.org/10.1117/12.840515

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