Paper
15 February 2010 High performance quantum dot-quantum well infrared focal plane arrays
S. Tsao, A. Myzaferi, M. Razeghi
Author Affiliations +
Proceedings Volume 7605, Optoelectronic Integrated Circuits XII; 76050J (2010) https://doi.org/10.1117/12.846252
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
Quantum dot (QD) devices are a promising technology for high operating temperature detectors. We have studied InAs QDs embedded in an InGaAs/InAlAs quantum well structure on InP substrate for middle wavelength infrared detectors and focal plane arrays (FPAs). This combined dot-well structure has weak dot confinement of carriers, and as a result, the device behavior differs significantly from that in more common dot systems with stronger confinement. We report on our studies of the energy levels in the QDWIP devices and on QD-based detectors operating at high temperature with D* over 1010 cmHz1/2/W at 150 K operating temperature and high quantum efficiency over 50%. FPAs have been demonstrated operating at up to 200 K. We also studied two methods of adapting the QDWIP device to better accommodate FPA readout circuit limitations.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Tsao, A. Myzaferi, and M. Razeghi "High performance quantum dot-quantum well infrared focal plane arrays", Proc. SPIE 7605, Optoelectronic Integrated Circuits XII, 76050J (15 February 2010); https://doi.org/10.1117/12.846252
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KEYWORDS
Staring arrays

Quantum wells

Doping

Sensors

Quantum efficiency

Indium arsenide

Modulation

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