ZnO thin films and nanostructures for emerging optoelectronic applications

D. J. Rogers; F. Hosseini Teherani; V. E. Sandana; M. Razeghi

doi:10.1117/12.862634

11 March 2010 ZnO thin films and nanostructures for emerging optoelectronic applications

D. J. Rogers, F. Hosseini Teherani, V. E. Sandana, M. Razeghi

Proceedings Volume 7605, Optoelectronic Integrated Circuits XII; 76050K (2010) https://doi.org/10.1117/12.862634
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

ZnO-based thin films and nanostructures grown by PLD for various emerging optoelectronic applications. AZO thin films are currently displacing ITO for many TCO applications due to recent improvements in attainable AZO conductivity combined with processing, cost and toxicity advantages. Advances in the channel mobilities and Id on/off ratios in ZnO-based TTFTs have opened up the potential for use as a replacement for a-Si in AM-OLED and AM-LCD screens. Angular-dependent specular reflection measurements of self-forming, moth-eye-like, nanostructure arrays grown by PLD were seen to have <0.5% reflectivity over the whole visible spectrum for angles of incidence between 10 and 60 degrees. Such nanostructures may be useful for applications such as AR coatings on solar cells. Compliant ZnO layers on mismatched/amorphous substrates were shown to have potential for MOVPE regrowth of GaN. This approach could be used as a means to facilitate lift-off of GaN-based LEDs from insulating sapphire substrates and could allow the growth of InGaN-based solar cells on cheap substrates. The green gap in InGaN-based LEDs was combated by substituting low Ts PLD n-ZnO for MOCVD n-GaN in inverted hybrid heterojunctions. This approach maintained the integrity of the InGaN MQWs and gave LEDs with green emission at just over 510 nm. Hybrid n-ZnO/p-GaN heterojunctions were also seen to have the potential for UV (375 nm) EL, characteristic of ZnO NBE emission. This suggests that there was significant hole injection into the ZnO and that such LEDs could profit from the relatively high exciton binding energy of ZnO.

Citation Download Citation

D. J. Rogers, F. Hosseini Teherani, V. E. Sandana, and M. Razeghi "ZnO thin films and nanostructures for emerging optoelectronic applications", Proc. SPIE 7605, Optoelectronic Integrated Circuits XII, 76050K (11 March 2010); https://doi.org/10.1117/12.862634

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