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5 February 2010 Fabrication of an integrated 670nm VCSEL-based sensor for miniaturized fluorescence sensing
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Abstract
Integrated optical semiconductor sensors are a promising technology for both lab-on-a-chip and molecular imaging applications due to their low cost, small size, high sensitivity, and flexible designs. We present the design and fabrication of a GaAs-based monolithically integrated fluorescence sensor incorporating 670nm VCSELs and PIN photodetectors. This is the first integrated, VCSEL-based fluorescence sensor with excitation at a far-red wavelength and is specifically designed for in vivo sensing applications. In addition, we discuss considerations to simultaneously achieve high power VCSELs and low dark current PIN photodetectors required for sensitive fluorescence detection. These fabricated sensors incorporate 670nm VCSELs emitting 2.0mW at room temperature (RT) with adjacent detectors exhibiting RT dark less than 2pA/mm2 (100mV reverse bias). Fluorescence emission filters suitable for transmitting Cy5.5 fluorescent dye emission were integrated with the photodetectors. The sensor detects Cy5.5 molecules in vitro at 5nM concentration with linear response for concentrations up to 25μM. These miniature sensors are suitable for portable diagnostic assays and in vivo rodent studies.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas D. O'Sullivan, Elizabeth Munro, James S. Harris, and Ofer Levi "Fabrication of an integrated 670nm VCSEL-based sensor for miniaturized fluorescence sensing", Proc. SPIE 7615, Vertical-Cavity Surface-Emitting Lasers XIV, 76150D (5 February 2010); https://doi.org/10.1117/12.842096
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KEYWORDS
Sensors

Vertical cavity surface emitting lasers

Luminescence

In vivo imaging

Dielectric filters

Photodetectors

Gallium arsenide

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