Surface roughness of gallium nitride with volcano-like protrusions formed by KrF excimer laser etching

Shui-Jinn Wang; Wei-Chi Lee; Kai-Ming Uang; Tron-Min Chen; Der-Ming Kuo; Pei-Ren Wang; Po-Hong Wang

doi:10.1117/12.841636

11 February 2010 Surface roughness of gallium nitride with volcano-like protrusions formed by KrF excimer laser etching

Shui-Jinn Wang, Wei-Chi Lee, Kai-Ming Uang, Tron-Min Chen, Der-Ming Kuo, Pei-Ren Wang, Po-Hong Wang

Proceedings Volume 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV; 76170P (2010) https://doi.org/10.1117/12.841636
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Use of deep ultraviolet (248 nm) KrF laser irradiation to roughen vertical GaN-based LEDs surface with volcanolike protrusions for light output (Lop) improvement was proposed and demonstrated. After pulse irradiations of KrF laser (750-850 mJ/cm²), the rate of electron-hole pair recombination at sites with dislocation defects is greater than for crystalline GaN, favoring for the formation of GaO_x, and in turn, resulting in a relatively lower etching rate therein and leading to a roughened surface with volcano-like protrusions. Typical diameter/height and density of protrusions are around 2~4 μm/2 μm and 10⁶ cm^-2. Through the use of KrF laser and KOH etching, an enhancement in the root-meansquare surface roughness by 250 times and an improvement in Lop by 25% at 750 mA were obtained. It is expected that the surface roughness of Gallium Nitride by KrF excimer laser technology would be a potential candidate for the fabrication of high power GaN-based LEDs for solid-state lighting in the near future.

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Shui-Jinn Wang, Wei-Chi Lee, Kai-Ming Uang, Tron-Min Chen, Der-Ming Kuo, Pei-Ren Wang, and Po-Hong Wang "Surface roughness of gallium nitride with volcano-like protrusions formed by KrF excimer laser etching", Proc. SPIE 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, 76170P (11 February 2010); https://doi.org/10.1117/12.841636

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KEYWORDS

Light emitting diodes

Etching

Excimer lasers

Gallium nitride

Surface roughness

Laser irradiation

Wet etching

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