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We have developed a novel direct conversion detector for digital radiography by using a fullerene (C60)-doped polymer
layer added on a thick amorphous selenium (a-Se) layer coupled to an amorphous silicon thin-film transistor (a-Si TFT)
array. This detector exhibits considerable improvement in the lag characteristics and durability in high ambient
temperatures. The C60-doped polymer layer, which is directly and uniformly solution cast on the a-Se layer and
followed by an inorganic electron-transporting layer, smoothly changes the electronic junction between the a-Se layer
and the inorganic layer. It lubricates the emission of photocurrents from the a-Se photo-conversion layer and leads to the
improved lag characteristics. Another merit of using a C60-doped polymer is that it is stabile in high-temperature
ambient conditions and is not degraded by humidity or a large amount of X-ray exposure. The polymer layer prevents the
crystallization of a-Se, which otherwise occurs on exposure of a-Se to high temperature not only during the deposition of
the inorganic layer or the metal electrode layer in the manufacturing process but also in actual use.
A prototype detector, with a size of 17 in × 17 in and a pixel pitch of 150 μm, exhibited a good resolution; its DQE is
approximately 48% at 1 cy/mm in 258 μC/kg (RQA5). This new development can simplify cooling apparatus and
detector modules and also make a wide range of operational environments available. In addition, the improved lag
characteristics make it possible to reduce the exposure intervals for static imaging, tomosynthesis, and other various
exposure techniques.
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