Photoluminescence properties of Nd-O+-codoped Si-based thin film

Meiling Yuan; Chenfa Li; Xinli Leng; Qingnian Wang

doi:10.1117/12.851422

2 December 2009 Photoluminescence properties of Nd-O⁺-codoped Si-based thin film

Meiling Yuan, Chenfa Li, Xinli Leng, Qingnian Wang

Proceedings Volume 7631, Optoelectronic Materials and Devices IV; 76312G (2009) https://doi.org/10.1117/12.851422
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China

Abstract

The photoluminescence(PL) spectra at room temperature for the Si-based samples doped by Nd, O⁺ by ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The PL spectra has multiple peak structure. The results show the intensity of PL spectra is closely relative to Nd and O⁺ implantation and to the temperature of thermal annealing. The light emission is more greater for the sample of fisrt O⁺ then Nd ion-implanted silicon than the one of first Nd then O⁺ ion-implanted silicon. The light-emitiing mechanism is also analyzed.

Citation Download Citation

Meiling Yuan, Chenfa Li, Xinli Leng, and Qingnian Wang "Photoluminescence properties of Nd-O⁺-codoped Si-based thin film", Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76312G (2 December 2009); https://doi.org/10.1117/12.851422

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available