In-depth overlay contribution analysis of a poly-layer reticle

Frank Laske; J. Whittey; K.-D. Roeth; J. McCormack; D. Adam; J. Bender; C. N. Berglund; M. Takac; Seurien Chou

doi:10.1117/12.848343

1 April 2010 In-depth overlay contribution analysis of a poly-layer reticle

Frank Laske, J. Whittey, K.-D. Roeth, J. McCormack, D. Adam, J. Bender, C. N. Berglund, M. Takac, Seurien Chou

Proceedings Volume 7638, Metrology, Inspection, and Process Control for Microlithography XXIV; 76382E (2010) https://doi.org/10.1117/12.848343
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Wafer overlay is one of the key challenges for lithography in semiconductor device manufacturing, this becomes increasingly challenging following the shrinking of the device node. Some of Low k1 techniques, such as Double Exposure add additional burden to the overlay margin because on most critical layers the pattern is created based on exposures of 2 critical masks. Besides impact on overlay performance, any displacement between those two exposures leads to a significant impact on space CD uniformity performance as well. Mask registration is considered a major contributor to within-field wafer overlay. We investigated in-die registration performance on a critical poly-layer reticle in-depth, applying adaptive metrology rules, We used Thin-Plate-Splinefit (TPS) and Fourier analysis techniques for data analysis. Several systematic error components were observed, demonstrating the value of higher sampling to control mask registration performance.

Citation Download Citation

Frank Laske, J. Whittey, K.-D. Roeth, J. McCormack, D. Adam, J. Bender, C. N. Berglund, M. Takac, and Seurien Chou "In-depth overlay contribution analysis of a poly-layer reticle", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76382E (1 April 2010); https://doi.org/10.1117/12.848343

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