The scaling laws applied to the metal-insulator transition in n-type GaAs semiconductor

A. El Kaaouachi; N. Ait Ben Ameur; B. Capoen; A. Nafidi; J. Hemine; R. Abdia; H. Sahsah; A. Sybous; A. Narjis; G. Biskupski

doi:10.1117/12.861461

30 August 2010 The scaling laws applied to the metal-insulator transition in n-type GaAs semiconductor

A. El Kaaouachi, N. Ait Ben Ameur, B. Capoen, A. Nafidi, J. Hemine, R. Abdia, H. Sahsah, A. Sybous, A. Narjis, G. Biskupski

Author Affiliations +

Proceedings Volume 7758, Physical Chemistry of Interfaces and Nanomaterials IX; 775805 (2010) https://doi.org/10.1117/12.861461
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States

Abstract

The metal-insulator transition (MIT) induced by magnetic field, in barely metallic and compensated n-type GaAs has been analyzed using a scale theory. The experiments were carried out at low temperature in the range (4.2 -0.066 K) and in magnetic field up to 4 T. We have determined the magnetic field for which the conductivity changes from the metallic behaviour to insulator regime. On the metallic side of the MIT, the electrical conductivity is found to obey σ = σ + mT^1/2 down to 66 mK. The zero-temperature conductivity can be described by scaling laws.

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A. El Kaaouachi, N. Ait Ben Ameur, B. Capoen, A. Nafidi, J. Hemine, R. Abdia, H. Sahsah, A. Sybous, A. Narjis, and G. Biskupski "The scaling laws applied to the metal-insulator transition in n-type GaAs semiconductor", Proc. SPIE 7758, Physical Chemistry of Interfaces and Nanomaterials IX, 775805 (30 August 2010); https://doi.org/10.1117/12.861461

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