Tin monosulfide thin films grown by atomic layer deposition using tin 2,4 pentandionate and hydrogen sulfide

Jay Yu Kim; Steven M. George

doi:10.1117/12.855890

24 August 2010 Tin monosulfide thin films grown by atomic layer deposition using tin 2,4 pentandionate and hydrogen sulfide

Jay Yu Kim, Steven M. George

Author Affiliations +

Proceedings Volume 7769, High and Low Concentrator Systems for Solar Electric Applications V; 776907 (2010) https://doi.org/10.1117/12.855890
Event: SPIE Solar Energy + Technology, 2010, San Diego, California, United States

Abstract

Tin monosulfide (SnS) was grown by atomic layer deposition (ALD) using sequential exposures of tin(II) 2,4- pentanedionate (Sn(acac)²) and hydrogen sulfide (H2S). In situ quartz crystal microbalance (QCM) studies showed that the SnS ALD mass gain per cycle was 11-12 ng/cm² at 175°C on a gold-covered QCM sensor. Using a film density of 5.07 g/cm3 determined by X-ray reflectivity measurements, these mass gains are equivalent to SnS ALD growth rates of 0.22-0.24 Å/cycle. The ratio of the mass loss and mass gain ratio |▵m²/▵m1| from the H2S and Sn(acac)₂ reactions was |▵m²/▵m1| ~0.32 at 175 °C. This measured ratio is close to the predicted ratio from the proposed surface chemistry for SnS ALD. The SnS ALD was self-limiting versus the Sn(acac)2 and H2S exposures. The SnS ALD growth rate was also independent of substrate temperature from 125-225 °C. X-ray fluorescence studies confirmed a Sn/S atomic ratio of ~1.0 for the SnS ALD films. X-ray photoelectron spectroscopy measurements revealed that the SnS ALD films contained oxygen impurities at 15-20 at% after air exposure. These oxygen-containing SnS ALD films displayed a bandgap of ~1.87 eV that is higher than the SnS bulk value of ~1.3 eV.

Citation Download Citation

Jay Yu Kim and Steven M. George "Tin monosulfide thin films grown by atomic layer deposition using tin 2,4 pentandionate and hydrogen sulfide", Proc. SPIE 7769, High and Low Concentrator Systems for Solar Electric Applications V, 776907 (24 August 2010); https://doi.org/10.1117/12.855890

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