SiGe BiCMOS manufacturing platform for mmWave applications

Arjun Kar-Roy; David Howard; Edward Preisler; Marco Racanelli; Samir Chaudhry; Volker Blaschke

doi:10.1117/12.865210

19 October 2010 SiGe BiCMOS manufacturing platform for mmWave applications

Arjun Kar-Roy, David Howard, Edward Preisler, Marco Racanelli, Samir Chaudhry, Volker Blaschke

Proceedings Volume 7837, Millimetre Wave and Terahertz Sensors and Technology III; 783707 (2010) https://doi.org/10.1117/12.865210
Event: SPIE Security + Defence, 2010, Toulouse, France

Abstract

TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz f_T/f_MAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node CMOS processes along with high density 5.6fF/μm² stacked MIM capacitors, high value polysilicon resistors, high-Q metal resistors, lateral PNP transistors, and triple well isolation using deep n-well for mixed-signal integration, and, multiple varactors and compact high-Q inductors for RF needs. Second, design enablement tools that maximize performance and lowers costs and time to market such as scalable PSP and HICUM models, statistical and Xsigma models, reliability modeling tools, process control model tools, inductor toolbox and transmission line models are described. Finally, demonstrations in silicon for mmWave applications in the areas of optical networking, mobile broadband, phased array radar, collision avoidance radar and W-band imaging are listed.

Citation Download Citation

Arjun Kar-Roy, David Howard, Edward Preisler, Marco Racanelli, Samir Chaudhry, and Volker Blaschke "SiGe BiCMOS manufacturing platform for mmWave applications", Proc. SPIE 7837, Millimetre Wave and Terahertz Sensors and Technology III, 783707 (19 October 2010); https://doi.org/10.1117/12.865210

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