Effects of gamma-irradiation on optical, electrical, and laser characteristics of pure and transition metal doped II-VI semiconductors

Tetyana Konak; Michael Tekavec; Vladimir V. Fedorov; Sergey B. Mirov

doi:10.1117/12.875539

3 March 2011 Effects of γ-irradiation on optical, electrical, and laser characteristics of pure and transition metal doped II-VI semiconductors

Tetyana Konak, Michael Tekavec, Vladimir V. Fedorov, Sergey B. Mirov

Author Affiliations +

Proceedings Volume 7912, Solid State Lasers XX: Technology and Devices; 791229 (2011) https://doi.org/10.1117/12.875539
Event: SPIE LASE, 2011, San Francisco, California, United States

Abstract

We report a comprehensive study of gamma-irradiation on optical, electrical, and laser characteristics of pure and transition-metal doped single and polycrystalline ZnS and ZnSe. Polished pure, Cr-doped, and Ag, Au, Cu, Al, In, and Mn co-doped ZnS and ZnSe crystals after absorption and electro-conductivity characterization were gamma-irradiated at doses of 1.37x10⁸, and 1.28x10⁸ rad at +10 and -3°C, respectively. Dynamic RT absorption studies, electro-conductivity measurements and mid-IR lasing were performed for different exposition times of crystals at RT. Cr:ZnSe and Cr:ZnS lasers based on identical gamma-irradiated and non-irradiated crystals featured a very similar pump thresholds, slope efficiencies, and output powers.

Citation Download Citation

Tetyana Konak, Michael Tekavec, Vladimir V. Fedorov, and Sergey B. Mirov "Effects of γ-irradiation on optical, electrical, and laser characteristics of pure and transition metal doped II-VI semiconductors", Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 791229 (3 March 2011); https://doi.org/10.1117/12.875539

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