Atomic layer deposition/molecular layer deposition for packaging and interconnect of N/MEMS

Y. C. Lee

doi:10.1117/12.877110

11 February 2011 Atomic layer deposition/molecular layer deposition for packaging and interconnect of N/MEMS

Y. C. Lee

Author Affiliations +

Proceedings Volume 7928, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS and Nanodevices X; 792802 (2011) https://doi.org/10.1117/12.877110
Event: SPIE MOEMS-MEMS, 2011, San Francisco, California, United States

Abstract

Atomic layer deposition (ALD)/molecular layer deposition (MLD) processes are able to fabricate nano-scaled inorganic/organic multilayers. Such multilayers are essential to novel packaging and interconnect technologies for NEMS/MEMS. ALD/MLD coatings could reduce water vapor transmission rate down to 5X10^-5 g/m²/day or lower for excellent hermetic/vacuum sealing. ALD/MLD coatings can also modify nanowire/nanomesh structures critical to flexible thermal ground planes that can reach an effective thermal conductivity of 30,000 W/mK and heat flux removal of 200 W/cm². ALD/MLD coatings can enhance the stability while reducing thickness of an embedded Li-ion battery. In addition, the ALD/MLD-based inorganic/organic multilayer can be used for interconnecting nanowire-based photonics.

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Y. C. Lee "Atomic layer deposition/molecular layer deposition for packaging and interconnect of N/MEMS", Proc. SPIE 7928, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS and Nanodevices X, 792802 (11 February 2011); https://doi.org/10.1117/12.877110

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KEYWORDS

Atomic layer deposition

Multilayers

Packaging

Nanowires

Gallium nitride

Silicon

Thermal effects

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