Study on photodoping properties for the multilayered films GeS2/Ag/GeS2 and Ag/GeS2/Ag

Yoshihisa Murakami; Takahiro Iijima; Moriaki Wakaki

doi:10.1117/12.873269

23 February 2011 Study on photodoping properties for the multilayered films GeS₂/Ag/GeS₂ and Ag/GeS₂/Ag

Yoshihisa Murakami, Takahiro Iijima, Moriaki Wakaki

Proceedings Volume 7934, Optical Components and Materials VIII; 793412 (2011) https://doi.org/10.1117/12.873269
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

The photodoping phenomenon was found by Kostyshin in Russia in 1965. Many researches have carried out studying on the photodoping phenomenon of Ag /a-As₂S₃ system, and various interesting behaviors have been reported. However, there are few works on the research of the photodoping phenomenon of Ag /a-GeS₂ double layer system. It was reported that the lateral diffusion was small at the photodoping phenomenon of Ag /a-GeS₂ system compared with the Ag /a- As₂S₃ system. Therefore, the feasibility of application for fine patterning is expected for the Ag /a-GeS₂ system. In general, a light beam with the photon energy near the optical gap energy (ca. 3.3eV) of a-GeS₂ is irradiated to cause photodoping. In this study, the photodoping characteristics of multilayer films, GeS₂/Ag/GeS₂ and Ag/GeS₂/Ag, were fabricated and characterized. The photodoping characteristics are compared with the conventional two layer films. In the GeS₂/Ag/GeS₂ three layered system, strong selectivity of photodoping property relating with the incident light wavelength was found. The feasibility to apply three layered films to optical memories and waveguides were suggested.

Citation Download Citation

Yoshihisa Murakami, Takahiro Iijima, and Moriaki Wakaki "Study on photodoping properties for the multilayered films GeS₂/Ag/GeS₂ and Ag/GeS₂/Ag", Proc. SPIE 7934, Optical Components and Materials VIII, 793412 (23 February 2011); https://doi.org/10.1117/12.873269

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