Influence of Li implantation on the optical and electrical properties of ZnO film

Saurabh Nagar; Bhavesh Sinha; Arjun Mandal; S. K. Gupta; Subhananda Chakrabarti

doi:10.1117/12.874054

14 March 2011 Influence of Li implantation on the optical and electrical properties of ZnO film

Saurabh Nagar, Bhavesh Sinha, Arjun Mandal, S. K. Gupta, Subhananda Chakrabarti

Proceedings Volume 7940, Oxide-based Materials and Devices II; 79401E (2011) https://doi.org/10.1117/12.874054
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

ZnO has been a subject of intense research in the optoelectronics community owing to its wide bandgap (3.3eV) and large exciton binding energy (60meV). However, difficulty in doping it p-type posts a hindrance in fabricating ZnObased devices. In an attempt to make it p-type we have studied Li-implanted (Energy=40keV, dose=5x10¹³cm^-2) <002> ZnO films grown over <001> sapphire substrates by Pulsed Laser Deposition technique at 400°C (sample A). The samples were subsequently subjected to Rapid Thermal Annealing at 650° and 750°C (samples B and C) for 30 seconds. Room temperature Photoluminescence study of as-deposited sample reveal consistent Donor-bound exciton (D⁰X) peak at 3.3eV, which shifts to 3.298eV, 3.298eV, and 3.289eV for samples A, B and C respectively. This data validates the n-type conductivity of the samples with a carrier concentration and Hall mobility of 8.68x10¹⁹cm^-3, 1.13x10¹⁹cm^-3 and 2.9x10²⁰cm^-3 and 2.14cm²/V-sec, 35.2cm²/V-sec, 16.9cm²/V-sec for samples A, B and C respectively. The reduced energy of D⁰X peak is probably due to strain variations occurred during the various processing steps. While the higher carrier concentration in sample C can be attributed to aggregated vacancy clusters at high temperature annealing. Since Li acts as an acceptor for ZnO, so a free electron-acceptor (FA) peak at 3.227eV, 3.217eV and 3.225eV in samples A, B and C is evident. A third peak at 3.128eV may be due to the donor-acceptor pair, a reason for a lower energy FA peak for sample B.

Citation Download Citation

Saurabh Nagar, Bhavesh Sinha, Arjun Mandal, S. K. Gupta, and Subhananda Chakrabarti "Influence of Li implantation on the optical and electrical properties of ZnO film", Proc. SPIE 7940, Oxide-based Materials and Devices II, 79401E (14 March 2011); https://doi.org/10.1117/12.874054

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