670 nm nearly diffraction limited tapered lasers with more than 30% conversion efficiency and 1 W cw and 3 W pulsed output power

B. Sumpf; P. Adamiec; M. Zorn; H. Wenzel; G. Erbert; G. Tränkle

doi:10.1117/12.872411

16 February 2011 670 nm nearly diffraction limited tapered lasers with more than 30% conversion efficiency and 1 W cw and 3 W pulsed output power

B. Sumpf, P. Adamiec, M. Zorn, H. Wenzel, G. Erbert, G. Tränkle

Author Affiliations +

Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 79530Z (2011) https://doi.org/10.1117/12.872411
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

Highly efficient 670 nm-tapered lasers with a vertical divergence of 31° (FWHM) will be presented. The devices are based on a GaInP single quantum well embedded in AlGaInP waveguide layers. Compared to previously reported material, the structure has an improved material quality with a transparency current density j_tr = 165 A/cm², an internal efficiency ηi = 0.75, small internal losses αi = 1.2 cm^-1, and a good temperature stability with T₀ = 120 K. 2 mm long tapered lasers were fabricated in a standard process, using reactive ion etching for the index-guided structures and ion implantation for the definition of the contact window in the tapered section. The properties of devices with 500 μm or 750 μm long ridge waveguide (RW) section and a flared section with 3° or 4° taper angle will be compared. In CW-operation an output power up to P = 1 W with a conversion efficiency of 30% and a beam propagation ratio M² (2nd moments) smaller than 2.3 were obtained. In pulsed mode up to 3.3 W output power was measured.

Citation Download Citation

B. Sumpf, P. Adamiec, M. Zorn, H. Wenzel, G. Erbert, and G. Tränkle "670 nm nearly diffraction limited tapered lasers with more than 30% conversion efficiency and 1 W cw and 3 W pulsed output power", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79530Z (16 February 2011); https://doi.org/10.1117/12.872411

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