Single-grain Si TFTs for high-speed flexible electronics

Ryoichi Ishihara; Tao Chen; Michiel van der Zwan; Ming He; H. Schellevis; Kees Beenakker

doi:10.1117/12.876649

3 February 2011 Single-grain Si TFTs for high-speed flexible electronics

Ryoichi Ishihara, Tao Chen, Michiel van der Zwan, Ming He, H. Schellevis, Kees Beenakker

Proceedings Volume 7956, Advances in Display Technologies; and E-papers and Flexible Displays; 795605 (2011) https://doi.org/10.1117/12.876649
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

Existent flat-panel display is mechanically stiff because it requires external connection of IC chips. At its present stage, displays with a-Si, metal oxide semiconductor or organic TFTs require still external connection of data driver and controllers, because of their low carrier mobilities. We will review our recent progress on direct formation of high speed Si circuits fabricated with a plastic compatible temperature. Large Si grains with a diameter of 4 microns were formed on predetermined positions by a pulsed laser crystallization process with a plastic compatible temperature. High performance transistors were fabricated inside a single Si grain.

Citation Download Citation

Ryoichi Ishihara, Tao Chen, Michiel van der Zwan, Ming He, H. Schellevis, and Kees Beenakker "Single-grain Si TFTs for high-speed flexible electronics", Proc. SPIE 7956, Advances in Display Technologies; and E-papers and Flexible Displays, 795605 (3 February 2011); https://doi.org/10.1117/12.876649

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