Paper
20 April 1987 Growth And Characterization Of GaAs1-xSbx On InP By Molecular Beam Epitaxy
J. Klem, D. Huang, H. Morkoc, N. Otsuka
Author Affiliations +
Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.940990
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We have grown GaAsi-xSbx alloys on InP by molecular beam epitaxy throughout the miscibility gap region and characterized these layers by a combination of variable temperature Hall measurements, room and low temperature photoluminescence and optical absorption, and transmission electron microscopy. For nearly lattice matched layers, we have obtained p-type material with room temperature hole concentrations of 0.5 - 3.0 1016cm-3 and associated mobilities of 40 - 70 cm2/Vs. Fitting the Hall data to a numerical model indicates that conductivity in these nominally undoped layers is due to two distinct acceptor levels. Photoluminescence linewidths less than 8 meV FWHM are observed at 4K.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Klem, D. Huang, H. Morkoc, and N. Otsuka "Growth And Characterization Of GaAs1-xSbx On InP By Molecular Beam Epitaxy", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); https://doi.org/10.1117/12.940990
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KEYWORDS
Temperature metrology

Data modeling

Silicon

Luminescence

Molecular beam epitaxy

Absorption

Doping

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