CD correction for half pitch 2x-nm on extreme ultraviolet lithography

Hajime Aoyama; Yuusuke Tanaka; Kazuo Tawarayama; Yukiyasu Arisawa; Taiga Uno; Takashi Kamo; Toshihiko Tanaka; Alan Myers; Yashesh Shroff; Tetsunori Murachi; Gilroy Vandentop; Ichiro Mori

doi:10.1117/12.878672

7 April 2011 CD correction for half pitch 2x-nm on extreme ultraviolet lithography

Hajime Aoyama, Yuusuke Tanaka, Kazuo Tawarayama, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Toshihiko Tanaka, Alan Myers, Yashesh Shroff, Tetsunori Murachi, Gilroy Vandentop, Ichiro Mori

Author Affiliations +

Proceedings Volume 7969, Extreme Ultraviolet (EUV) Lithography II; 79691J (2011) https://doi.org/10.1117/12.878672
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

This paper describes the critical dimension (CD) accuracy of metal-layer patterns for the 15-nm logic node and beyond replicated with model-based optical proximity correction, flare variation compensation, and shadowing effect correction. The model fitting took resist shrinkage during CD measurements into account so as to reduce the modeling error. Since sufficient accuracy was obtained for various patterns under the assumptions of device production, and since conventional illumination could be used, it was possible to establish a design rule with few restrictions for the 15-nm node. For the 12-nm logic node, an SRAM pattern for a cell size of 0.0288 μm² was fabricated using dipole illumination. Advanced pre-production optics were used to assess the impact of flare on CD variation. Since chemical flare occurs in SSR4, a top coating was used to prevent acid re-adsorption during the post-exposure bake. The flare due to the optics was reduced to half that of conventional optics, and the CD variation due to flare was found to be predictable from the point spread function of the projection optics. This means that the established concept of flare correction is usable with advanced optics.

Citation Download Citation

Hajime Aoyama, Yuusuke Tanaka, Kazuo Tawarayama, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Toshihiko Tanaka, Alan Myers, Yashesh Shroff, Tetsunori Murachi, Gilroy Vandentop, and Ichiro Mori "CD correction for half pitch 2x-nm on extreme ultraviolet lithography", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79691J (7 April 2011); https://doi.org/10.1117/12.878672

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
12 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Critical dimension metrology

Scanning electron microscopy

Extreme ultraviolet lithography

Logic

Photomasks

Optical proximity correction

Model-based design

Show All Keywords

Keywords/Phrases

Search In:

Publication Years