Responsivity determination of a hydrogenated amorphous silicon micro-bolometer array

A. Orduña-Díaz; M. Rojas-López; R. Delgado-Macuil; Alfonso Torres-Jácome; F. J. De la Hidalga-Wade; Daniel Ferrusca; Salvador Ventura-Gonzalez; C. G. Treviño-Palacios

doi:10.1117/12.903349

2 November 2011 Responsivity determination of a hydrogenated amorphous silicon micro-bolometer array

A. Orduña-Díaz, M. Rojas-López, R. Delgado-Macuil, Alfonso Torres-Jácome, F. J. De la Hidalga-Wade, Daniel Ferrusca, Salvador Ventura-Gonzalez, C. G. Treviño-Palacios

Author Affiliations +

Proceedings Volume 8011, 22nd Congress of the International Commission for Optics: Light for the Development of the World; 80111V (2011) https://doi.org/10.1117/12.903349
Event: International Commission for Optics (ICO 22), 2011, Puebla, Mexico

Abstract

We present the characterization of a boron doped hydrogenated amorphous silicon (a-Si:H) thermosensor bolometer array for far infrared detection. The array was fabricated over a silicon wafer on a 0.4 μm silicon-nitride (Si₃N₄) layer. Wet bulk micromachining was used to create pixels of suspended nitride film by removing the silicon underneath. On this film, a boron doped a-Si:H layer was deposited using a low frequency PECVD system at 540 K. Conventional lithography was used to define the bolometers on the nitride windows, and the 5 × 5 microbolometer array was fabricated and characterized at 77 K. A 1.17 x 10^-2 mA/W responsivity, with a temperature coefficient of resistance (TCR) of 4.25%, were obtained.

Citation Download Citation

A. Orduña-Díaz, M. Rojas-López, R. Delgado-Macuil, Alfonso Torres-Jácome, F. J. De la Hidalga-Wade, Daniel Ferrusca, Salvador Ventura-Gonzalez, and C. G. Treviño-Palacios "Responsivity determination of a hydrogenated amorphous silicon micro-bolometer array", Proc. SPIE 8011, 22nd Congress of the International Commission for Optics: Light for the Development of the World, 80111V (2 November 2011); https://doi.org/10.1117/12.903349

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