Blistering behavior in Mo/Si multilayers

A. S. Kuznetsov; M. A. Gleeson; R. W. E. van de Kruijs; F. Bijkerk

doi:10.1117/12.887326

18 May 2011 Blistering behavior in Mo/Si multilayers

A. S. Kuznetsov, M. A. Gleeson, R. W. E. van de Kruijs, F. Bijkerk

Proceedings Volume 8077, Damage to VUV, EUV, and X-ray Optics III; 807713 (2011) https://doi.org/10.1117/12.887326
Event: SPIE Optics + Optoelectronics, 2011, Prague, Czech Republic

Abstract

This paper is concerned with mapping the characteristics of blistering induced on Mo/Si multilayers as a result of irradiation by hydrogen species generated in a thermal capillary cracker. The nature and extent of the damage observed is dependent on exposure conditions such as the sample temperature, the hydrogen isotope used and the total fluence. Increasing the sample temperature leads to fewer but larger blisters. When D₂ is used as the working gas, blisters are ~5 times smaller in diameter than in the case of H₂ exposure, but more blisters are formed. Increasing the gas flow induces more and bigger blisters and blisters were observed to develop in two distinct size distributions.

Citation Download Citation

A. S. Kuznetsov, M. A. Gleeson, R. W. E. van de Kruijs, and F. Bijkerk "Blistering behavior in Mo/Si multilayers", Proc. SPIE 8077, Damage to VUV, EUV, and X-ray Optics III, 807713 (18 May 2011); https://doi.org/10.1117/12.887326

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