Paper
4 October 2011 Numerical optimization of illumination and mask layout for the enlargement of process windows and for the control of photoresist profiles in proximity printing
Kristian Motzek, Stefan Partel, Uwe Vogler, Andreas Erdmann
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Abstract
Although proximity printing is the oldest and, in view of the basic optical setup, simplest photolithographic technique, it still remains in heavy use in the semiconductor manufacturing industry. The fact that this technique exists for a long time does not mean that there is no more room for improvements or new applications. Lending concepts developed for modern projection scanners and steppers and adapting them for our purposes, we demonstrate how numerical simulation and optimization can help to make the proximity printing process more stable against process variations and to increase the resolution for critical features. For this purpose, we numerically optimize the angular spectrum of the illumination and the mask layout. Furthermore, we couple the optimization of the optical degrees of freedom to the simulation of photoresist development to assess the effects of changes to the illumination and mask on the final photoresist profile.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kristian Motzek, Stefan Partel, Uwe Vogler, and Andreas Erdmann "Numerical optimization of illumination and mask layout for the enlargement of process windows and for the control of photoresist profiles in proximity printing", Proc. SPIE 8171, Physical Optics, 81710K (4 October 2011); https://doi.org/10.1117/12.896755
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Cited by 1 scholarly publication.
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KEYWORDS
Photomasks

Printing

Collimation

Photoresist materials

Semiconducting wafers

Source mask optimization

Optimization (mathematics)

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