Paper
19 January 1988 Invited Paper GaAs High-Gain Photodetectors : Attractive Devices For Raman Spectroscopy
Monique T. Constant, Didier J. Decoster
Author Affiliations +
Abstract
The purpose of this paper is to present GaAs photodetectors which are suitable for Raman Spectroscopy. After a description of the devices and their technology, a complete analysis of their electrical and optical properties is presented. The results obtained are reviewed briefly in terms of static and dynamic responsivities or gains and noise figures. An example of the application of these devices in a conventionnal Raman detection system and the performances of the photodetector array in image detection are given. Furthermore, the use of the Schottky photodiode associated with an FET in Raman spectroscopic systems is discussed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Monique T. Constant and Didier J. Decoster "Invited Paper GaAs High-Gain Photodetectors : Attractive Devices For Raman Spectroscopy", Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); https://doi.org/10.1117/12.941946
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KEYWORDS
Raman spectroscopy

Photoresistors

Field effect transistors

Gallium arsenide

Photodiodes

Integrated circuits

Luminescence

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