MBE growth of electrically pumped VECSELs

M. Golling; W. P. Pallmann; C. A. Zaugg; T. Südmeyer; U. Keller

doi:10.1117/12.908554

14 February 2012 MBE growth of electrically pumped VECSELs

M. Golling, W. P. Pallmann, C. A. Zaugg, T. Südmeyer, U. Keller

Proceedings Volume 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II; 824213 (2012) https://doi.org/10.1117/12.908554
Event: SPIE LASE, 2012, San Francisco, California, United States

Abstract

VECSELs are excellent high power semiconductor lasers with diffraction-limited circular output beam and outstanding modelocking performance. The output power can be scaled up by simply increasing the mode area on the gain region. Electrical pumping requires doped layers and also requires changes in the epitaxial design. Crucial for high power operation is a low electrical resistance, because electrical power heats the device. The p-doped mirror gives the largest contribution to the electrical resistance. There are certain possibilities to reduce the resistance while keeping the optical losses as low as possible. Among these techniques are graded interfaces and improved doping schemes.

Citation Download Citation

M. Golling, W. P. Pallmann, C. A. Zaugg, T. Südmeyer, and U. Keller "MBE growth of electrically pumped VECSELs", Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 824213 (14 February 2012); https://doi.org/10.1117/12.908554

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