Hydrothermal growth and characterization of bulk Ga-doped and Ga/N-codoped ZnO crystals

Buguo Wang; Matthew Mann; Michael Snure; Michael J. Callahan; David C. Look

doi:10.1117/12.909957

29 February 2012 Hydrothermal growth and characterization of bulk Ga-doped and Ga/N-codoped ZnO crystals

Buguo Wang, Matthew Mann, Michael Snure, Michael J. Callahan, David C. Look

Proceedings Volume 8263, Oxide-based Materials and Devices III; 826305 (2012) https://doi.org/10.1117/12.909957
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Bulk ZnO crystals were grown by the hydrothermal technique with Ga₂O₃ or GaN added to the solution in an attempt to dope with Ga, or co-dope with Ga and N, respectively. Adding Ga₂O₃ alone to the growth solution significantly reduces the ZnO growth rate; however, the resulting crystal is highly conductive, with a resistivity approaching 0.01 Ω cm. In contrast, the addition of GaN had less effect on the growth of ZnO, but the crystal was of poor quality with a higher resistivity, about 0.1 Ω cm. Photoluminescence spectra at 4 K show Ga⁰-bound-exciton peak energies of 3.3604 and 3.3609 eV for the Ga- and Ga/N-doped crystals, respectively; these energies differ slightly from the literature value of 3.3598 eV, evidently due to compressive strain. Other peaks at 3.307, 3.290, 3.236, and 3.20 eV were found in the Ga/N-codoped ZnO after the crystal was annealed at 600°C in air. The 3.307 eV peak is the so-called A line, and likely arises from recombination of a free electron with a neutral N-related acceptor.

Citation Download Citation

Buguo Wang, Matthew Mann, Michael Snure, Michael J. Callahan, and David C. Look "Hydrothermal growth and characterization of bulk Ga-doped and Ga/N-codoped ZnO crystals", Proc. SPIE 8263, Oxide-based Materials and Devices III, 826305 (29 February 2012); https://doi.org/10.1117/12.909957

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