Paper
29 February 2012 Properties of TCO anodes deposited by atmospheric pressure chemical vapor deposition and their application to OLED lighting
R. Y. Korotkov
Author Affiliations +
Proceedings Volume 8263, Oxide-based Materials and Devices III; 826308 (2012) https://doi.org/10.1117/12.906723
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
Doped ZnO is one of the materials currently being considered in commercial optoelectronic applications as a potential indium tin oxide (ITO) replacement for the transparent conducting oxide (TCO). The properties of doped ZnO anodes prepared at Arkema Inc. are analyzed using spectroscopic ellipsometer (230 to 1700 nm) and Hall-effect. The modeling of the refractive indexes is conducted using a double oscillator model. The model parameters are tested on a double layer: undoped and doped structure deposited by atmospheric pressure chemical vapor deposition (APCVD) on glass substrates. Excellent correlation between calculated and experimental parameters was obtained.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Y. Korotkov "Properties of TCO anodes deposited by atmospheric pressure chemical vapor deposition and their application to OLED lighting", Proc. SPIE 8263, Oxide-based Materials and Devices III, 826308 (29 February 2012); https://doi.org/10.1117/12.906723
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KEYWORDS
Zinc oxide

Oscillators

Dielectrics

Electro optical modeling

Polishing

Glasses

Oxygen

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