Paper
24 January 2012 Active pixels of transverse field detector based on a charge preamplifier
G. Langfelder, C. Buffa, A. F. Longoni, A. Pelamatti, F. Zaraga
Author Affiliations +
Proceedings Volume 8299, Digital Photography VIII; 829906 (2012) https://doi.org/10.1117/12.910115
Event: IS&T/SPIE Electronic Imaging, 2012, Burlingame, California, United States
Abstract
The Transverse Field Detector (TFD), a filter-less and tunable color sensitive pixel, is based on the generation of specific electric field configurations within a depleted Silicon volume. Each field configuration determines a set of three or more spectral responses that can be used for direct color acquisition at each pixel position. In order to avoid unpredictable changes of the electric field configuration during the single image capture, a specific active pixel (AP) has been designed. In this AP the dark- and photo-generated charge is not integrated directly on the junction capacitance, but, for each color, it is integrated on the feedback capacitance of a single-transistor charge pre-amplifier. The AP further includes a bias transistor, a reset transistor and a follower. In this work the design of such a pixel is discussed and the experimental results obtained on a 2x2 matrix of these active pixels are analyzed in terms of spectral response, linearity, noise, dynamic range and repeatability.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Langfelder, C. Buffa, A. F. Longoni, A. Pelamatti, and F. Zaraga "Active pixels of transverse field detector based on a charge preamplifier", Proc. SPIE 8299, Digital Photography VIII, 829906 (24 January 2012); https://doi.org/10.1117/12.910115
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KEYWORDS
Capacitance

Transistors

Sensors

Electronics

Silicon

CMOS technology

Optical filters

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