Detectors For Monolithic Optoelectronics

D. J. Jackson; J. Y. Josefowicz; D. B . Rensch; D. L. Persechini

doi:10.1117/12.942561

4 February 1988 Detectors For Monolithic Optoelectronics

D. J. Jackson, J. Y. Josefowicz, D. B . Rensch, D. L. Persechini

Proceedings Volume 0839, Components for Fiber Optic Applications II; (1988) https://doi.org/10.1117/12.942561
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

In this paper, we present data on the electrical characteristics and the optical response of photodetectors integrated on GaAs substrates with FET devices. We compare the differences between devices fabricated on globally implanted areas versus the undoped semi-insulating regions of the same wafer.

Citation Download Citation

D. J. Jackson, J. Y. Josefowicz, D. B . Rensch, and D. L. Persechini "Detectors For Monolithic Optoelectronics", Proc. SPIE 0839, Components for Fiber Optic Applications II, (4 February 1988); https://doi.org/10.1117/12.942561

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