A comparison between PECVD and ALD for the fabrication of slot-waveguide-based sensors

Grégory Pandraud; Agung Purniawan; Eduardo Margallo-Balbás; Pasqualina M. Sarro

doi:10.1117/12.922400

1 May 2012 A comparison between PECVD and ALD for the fabrication of slot-waveguide-based sensors

Grégory Pandraud, Agung Purniawan, Eduardo Margallo-Balbás, Pasqualina M. Sarro

Proceedings Volume 8424, Nanophotonics IV; 84242P (2012) https://doi.org/10.1117/12.922400
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

We fabricated horizontal slot waveguides using two low temperature deposition techniques ensuring the full compatibility of the processes with CMOS technology. Slots width as thin as 45 nm with smooth slot surfaces can easily be fabricated with simple photolithographic steps. Fundamental TM-like slot mode in which the E-field is greatly enhanced within slot showed a 23.9 dB/cm and a 18 dB/cm in a PECVD SiC/SiO₂/SiC and a ALD TiO₂/Al2O₃/TiO₂ vertical slot waveguide, respectively.

Citation Download Citation

Grégory Pandraud, Agung Purniawan, Eduardo Margallo-Balbás, and Pasqualina M. Sarro "A comparison between PECVD and ALD for the fabrication of slot-waveguide-based sensors", Proc. SPIE 8424, Nanophotonics IV, 84242P (1 May 2012); https://doi.org/10.1117/12.922400

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