Study of EUV mask inspection using projection EB optics with programmed pattern defect

Ryoichi Hirano; Hidehiro Watanabe; Susumu Iida; Tsuyoshi Amano; Tsuneo Terasawa; Masahiro Hatakeyama; Takeshi Murakami

doi:10.1117/12.978240

29 June 2012 Study of EUV mask inspection using projection EB optics with programmed pattern defect

Ryoichi Hirano, Hidehiro Watanabe, Susumu Iida, Tsuyoshi Amano, Tsuneo Terasawa, Masahiro Hatakeyama, Takeshi Murakami

Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 84411G (2012) https://doi.org/10.1117/12.978240
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan

Abstract

EUV lithography with 13.5nm exposure wavelength is dominant candidate for the next generation lithography because of its excellent resolution for 16nm half pitch (hp) node device and beyond. High sensitivity EUV mask pattern defect detection is one of the major issues to realize the device fabrication by using the EUV lithography. In order to achieve the inspection sensitivity and the applicability for 1x node, a projection electron microscopy (PEM) system; which enables us to make the inspection in high resolution and high speed as compared with conventional DUV and EB inspection systems is employed. Applying the PEM system to 16nm hp node defect inspection, we designed the system with high electron energy, low aberration optics. To guarantee the quality of the 16nm node EUV mask, corresponding size programmed defect masks are designed, and PEM system defect detectability is evaluated by using the current system for 2X nm generation. Also, the defect printability is verified by simulation. In this paper, we described targeted defect detection size and show the specification of 16nm hp node PEM system and the verification.

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Ryoichi Hirano, Hidehiro Watanabe, Susumu Iida, Tsuyoshi Amano, Tsuneo Terasawa, Masahiro Hatakeyama, and Takeshi Murakami "Study of EUV mask inspection using projection EB optics with programmed pattern defect", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84411G (29 June 2012); https://doi.org/10.1117/12.978240

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