Paper
15 October 2012 150nm continuous tuning of external cavity quantum-dot lasers operated below 90 mA
Yu-Chen Chen, Gray Lin, Pei-Yin Su, Hsu-Chieh Cheng
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Abstract
Low threshold and widely tunable InAs/InGaAs/GaAs quantum-dot external-cavity lasers are implemented with gratingcoupled Littrow configuration. Throughout the tuning range of 130 nm, from 1160 to 1290 nm, the threshold current density is less than 0.9 kA/cm2 and without noticeable threshold jump. For a shorter-cavity device, the injection current is kept at a record low value of 90 mA but the tuning range is further extended from 1143 to 1293 nm. We discuss the effect of cavity length on the tuning characteristics and propose the strategy for design and optimization of multilayer quantum-dot structure.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu-Chen Chen, Gray Lin, Pei-Yin Su, and Hsu-Chieh Cheng "150nm continuous tuning of external cavity quantum-dot lasers operated below 90 mA", Proc. SPIE 8497, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI, 84970N (15 October 2012); https://doi.org/10.1117/12.928905
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KEYWORDS
Tunable lasers

Coating

Laser damage threshold

Semiconductor lasers

Surgery

Indium arsenide

Laser applications

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