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A moisture sensor was fabricated based on porous thin film of γ-Al2O3 formed between the parallel gold electrodes. The
sensor works on capacitive technique. The sensing film was fabricated by dipcoating of aluminium hydroxide sol
solution obtained from the sol-gel method. The porous structure of the film of γ-Al2O3 phase was obtained by sintering
the film at 450 °C for 1 h. The electrical parameters of the sensor have been determined by Agilent 4294A impedance
analyzer. The sensor so obtained is found to be sensitive in moisture range 100-600 ppmV. The response time of the
sensor in ppmV range moisture is very low ~ 24 s and recovery time is ~ 37 s.
Lokesh Kumar,Shailesh Kumar,S. A. Khan, andTariqul Islam
"Electrical characterization of γ-Al2O3 thin film parallel plate capacitive sensor for trace moisture detection", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490X (15 October 2012); https://doi.org/10.1117/12.926779
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Lokesh Kumar, Shailesh Kumar, S. A. Khan, Tariqul Islam, "Electrical characterization of γ-Al2O3 thin film parallel plate capacitive sensor for trace moisture detection," Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490X (15 October 2012); https://doi.org/10.1117/12.926779