Paper
15 October 2012 Effect of pulse parameter and dark count probability on the performance of a gated mode SPAD
Author Affiliations +
Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492O (2012) https://doi.org/10.1117/12.925337
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
In this paper, we present a theoretical analysis of gated mode single photon avalanche detector (SPAD) that quantifies the contribution of different parameters to the single photon quantum efficiency (SPQE).The study gives the variation of SPQE of SPAD with dark count probability for different parameters such as pulse repetition rate, hold-off time, pulse width for constant photon intensity which reveals that there exists an optimum value of Pd for which SPQE is maximized.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. R. Das, Tania Das, and Shampa Guin "Effect of pulse parameter and dark count probability on the performance of a gated mode SPAD", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492O (15 October 2012); https://doi.org/10.1117/12.925337
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KEYWORDS
Palladium

Single photon

Sensors

Avalanche photodetectors

Quantum efficiency

Protactinium

Photodetectors

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