Numerical simulation on output performance of continuous-wave Raman silicon lasers

Hongxin Su; Lijing Xu; Zhitao Dai; Xiaoming Li; Xu Li

doi:10.1117/12.999705

29 November 2012 Numerical simulation on output performance of continuous-wave Raman silicon lasers

Hongxin Su, Lijing Xu, Zhitao Dai, Xiaoming Li, Xu Li

Proceedings Volume 8552, Semiconductor Lasers and Applications V; 85520U (2012) https://doi.org/10.1117/12.999705
Event: Photonics Asia, 2012, Beijing, China

Abstract

To understand the physical process of SRS lasing in SOI waveguides and to optimize the performance of continuouswave Raman silicon lasers, in this paper numerical simulation on the output characteristics of continuous-wave Raman silicon lasers with different parameters is performed. Based on power propagation equations in SOI waveguides and boundary conditions, the output powers as functions of the launched pump power, the gain length, the reflectivity of the output end, and the effective mode area of the SOI waveguide are presented. It is shown that two-photon absorption (TPA) and free-carrier absorption (FCA) lead to a significant reduction to the output power of continuous-wave Raman silicon lasers, which is in good agreement with the experimental reports. Numerical analysis predicts that in the absence of TPA and FCA there are optimum values for the silicon waveguide length, the effective mode area and the output reflectivity, respectively.

Citation Download Citation

Hongxin Su, Lijing Xu, Zhitao Dai, Xiaoming Li, and Xu Li "Numerical simulation on output performance of continuous-wave Raman silicon lasers", Proc. SPIE 8552, Semiconductor Lasers and Applications V, 85520U (29 November 2012); https://doi.org/10.1117/12.999705

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