Selective localised modifications of silicon crystal by ultrafast laser induced micro-explosion

Ludovic Rapp; Bianca Haberl; Jodie E. Bradby; Eugene G. Gamaly; Jim S. Williams; Saulius Juodkasis; Andrei V. Rode

doi:10.1117/12.2007550

29 March 2013 Selective localised modifications of silicon crystal by ultrafast laser induced micro-explosion

Ludovic Rapp, Bianca Haberl, Jodie E. Bradby, Eugene G. Gamaly, Jim S. Williams, Saulius Juodkasis, Andrei V. Rode

Proceedings Volume 8607, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVIII; 86070H (2013) https://doi.org/10.1117/12.2007550
Event: SPIE LASE, 2013, San Francisco, California, United States

Abstract

Femtosecond (fs) laser pulses focused and confined inside the bulk of a material can deposit a volume energy density up to several MJ/cm³ in a sub-micron volume. This creates highly non-equilibrium, hot, dense and short-lived plasmas with conditions favorable for arrangement of atoms into unusual material phases. Singlecrystal silicon was exposed to strong shock waves induced by laser micro-explosion in confined geometry. The conditions of confinement were realized by focusing 170-fs pulses, with the energy up to 2.5 μJ, on a Si surface buried under a 10-μm thick SiO₂-layer formed by oxidation of a Si-wafer. The generated intensity was 10¹⁵ W/cm², well above the threshold for optical breakdown and plasma formation. The shock wave modified areas of the Si crystal were sectioned using a focused-ion beam and characterized with scanning electron microscopy. A void surrounded by a shock-wave-modified Si was observed at the Si/SiO₂ boundary. The results demonstrate that confined micro-explosion opens up new perspectives for studies of high-pressure materials at the laboratory table-top expanding the laser-induced micro-explosion capabilities into the domain of non-transparent materials.

Citation Download Citation

Ludovic Rapp, Bianca Haberl, Jodie E. Bradby, Eugene G. Gamaly, Jim S. Williams, Saulius Juodkasis, and Andrei V. Rode "Selective localised modifications of silicon crystal by ultrafast laser induced micro-explosion", Proc. SPIE 8607, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVIII, 86070H (29 March 2013); https://doi.org/10.1117/12.2007550

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