Paper
9 March 2013 Piezoresistive pens for dip-pen nanolithography
A. K. Henning, J. Fragala, R. Shile, P. Simao
Author Affiliations +
Abstract
The conventional approach to measurement of the deflection of microfabricated cantilevers centers on the use of an optical lever. The use of optical lever technology increases the size, complexity, and cost of systems using microfabricated cantilevers. Occasionally, piezoresistors have been used to sense deflection. But, for atomic force microscope applications in particular, topographical sensitivity has demanded the higher sensitivity of the optical lever. For dip-pen nanolithography (DPN) microfabricated cantilevers do not require the same degree of deflection sensitivity. So, for these applications, piezoresistors can be used to sense deflection. In this work, we present a novel approach to an integrated DPN pen. Piezoresistive silicon stress sensors are integrated into a silicon nitride cantilever. The device design, process design, and fabrication methods for building these sensors, and sensor-actuators, are demonstrated. Integration of heaters, along with the piezoresistors, is also demonstrated.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. K. Henning, J. Fragala, R. Shile, and P. Simao "Piezoresistive pens for dip-pen nanolithography", Proc. SPIE 8615, Microfluidics, BioMEMS, and Medical Microsystems XI, 861510 (9 March 2013); https://doi.org/10.1117/12.2008785
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Cited by 1 scholarly publication.
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KEYWORDS
Silicon

Semiconducting wafers

Scanning probe lithography

Etching

Wafer bonding

Oxides

Sensors

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