Slow/fast light due to induced dispersion in 1.55 um semiconductor lasers

Hemashilpa Kalagara; Peter G. Eliseev; Marek Osiński

doi:10.1117/12.2008622

14 March 2013 Slow/fast light due to induced dispersion in 1.55 μm semiconductor lasers

Hemashilpa Kalagara, Peter G. Eliseev, Marek Osiński

Proceedings Volume 8619, Physics and Simulation of Optoelectronic Devices XXI; 86190N (2013) https://doi.org/10.1117/12.2008622
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Conditions for obtaining slow/fast and backscattered light via nonlinear wave interactions in semiconductor lasers are investigated using numerical modeling of interacting waves. Feasibility of superluminal propagation induced by a strong driving wave is discussed.

Citation Download Citation

Hemashilpa Kalagara, Peter G. Eliseev, and Marek Osiński "Slow/fast light due to induced dispersion in 1.55 μm semiconductor lasers", Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 86190N (14 March 2013); https://doi.org/10.1117/12.2008622

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