Impact of thermal oxidation, surface chemistry and porous silicon morphology for sensing applications

I. A. Kolmychek; D. A. Kopylov; T. V. Murzina; F. Baldini; S. Berneschi; D. Farnesi; A. Giannetti; S. Tombelli; G. Nunzi Conti; S. Soria

doi:10.1117/12.2007377

13 March 2013 Impact of thermal oxidation, surface chemistry and porous silicon morphology for sensing applications

I. A. Kolmychek, D. A. Kopylov, T. V. Murzina, F. Baldini, S. Berneschi, D. Farnesi, A. Giannetti, S. Tombelli, G. Nunzi Conti, S. Soria

Author Affiliations +

Proceedings Volume 8627, Integrated Optics: Devices, Materials, and Technologies XVII; 86271E (2013) https://doi.org/10.1117/12.2007377
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

An ideal diagnostic device should be inexpensive, easy-to-use, rapid and reliable. Nanostructured porous silicon (PSi) satisfies these criterions including label-free optical detection and high throughput detection. Pore morphology (size, porosity) must be tailored for each specific application, and for immunosensing applications PSi morphology has been optimized for maximal pore infiltration of larger proteins as immuno gamma globlulin (IgG). Sensor degradation by high salt concentration induces a baseline drift. Different thermal oxidation procedures have been studied in order to obtain a stable sensor in the 3 hour incubation period of the immunoassay with negligible drift

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I. A. Kolmychek, D. A. Kopylov, T. V. Murzina, F. Baldini, S. Berneschi, D. Farnesi, A. Giannetti, S. Tombelli, G. Nunzi Conti, and S. Soria "Impact of thermal oxidation, surface chemistry and porous silicon morphology for sensing applications", Proc. SPIE 8627, Integrated Optics: Devices, Materials, and Technologies XVII, 86271E (13 March 2013); https://doi.org/10.1117/12.2007377

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